Strongly Enhanced THz Emission caused by Localized Surface Charges in Semiconducting Germanium Nanowires
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چکیده
منابع مشابه
Strongly Enhanced THz Emission caused by Localized Surface Charges in Semiconducting Germanium Nanowires
A principal cause of THz emission in semiconductor nanostructures is deeply involved with geometry, which stimulates the utilization of indirect bandgap semiconductors for THz applications. To date, applications for optoelectronic devices, such as emitters and detectors, using THz radiation have focused only on direct bandgap materials. This paper reports the first observation of strongly enhan...
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E. Hendry,1,* M. Koeberg,1 J. M. Schins,2 L. D. A. Siebbeles,2 and M. Bonn1,3 1Leiden Institute of Chemistry, Leiden University, P.O. Box 9502, 2300 RA Leiden, The Netherlands 2Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands 3FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ, Amsterdam, The Netherlands (Received 30...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2013
ISSN: 2045-2322
DOI: 10.1038/srep01984